Production method for semiconductor device
US8937012B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 30, 2011 |
| Grant date | Jan 20, 2015 |
| Priority date | — |
| Expiry date | Aug 30, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Provided is a production method for a semiconductor device comprising a metal silicide layer. According to one embodiment of the present invention, the production method for a semiconductor device comprises the steps of: forming an insulating layer on a substrate, on which a polysilicon pattern has been formed, in such a way that the polysilicon pattern is exposed; forming a silicon seed layer on the exposed polysilicon pattern that has been selectively exposed with respect to the insulating layer; forming a metal layer on the substrate on which the silicon seed layer has been formed; and forming a metal silicide layer by carrying out a heat treatment on the substrate on which the metal layer has been formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.