Substrate preparation for selective area deposition
US8937016B2 · kind B2 · utility
1Cited by
5References
19Claims
0Family size
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Key dates
| Filing date | Jun 21, 2013 |
| Grant date | Jan 20, 2015 |
| Priority date | — |
| Expiry date | Jun 21, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of producing a patterned inorganic thin film element includes providing a substrate having a patterned thin layer of polymeric inhibitor on the surface. The substrate and the patterned thin layer of polymeric inhibitor are exposed to a highly reactive oxygen process. An inorganic thin film layer is deposited on the substrate in areas without inhibitor using an atomic layer deposition process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.