Methods of forming a pattern on a substrate
US8937018B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 6, 2013 |
| Grant date | Jan 20, 2015 |
| Priority date | — |
| Expiry date | Mar 6, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0337
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a pattern on a substrate includes forming spaced, upwardly-open, cylinder-like structures projecting longitudinally outward of a base. Photoresist is formed elevationally over and laterally inward of the cylinder-like structures. The photoresist is patterned to form interstitial spaces into the photoresist laterally outward of the cylinder-like structures. The interstitial spaces are individually surrounded by at least three of the cylinder-like structures. The patterned photoresist is used as an etch mask while etching interstitial openings into the base and while the photoresist is laterally inward of the cylinder-like structures. Other aspects are disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.