Patent · US Active

Triggerable bidirectional semiconductor device

US8937334B2 · kind B2 · utility

0Cited by
4References
26Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 14, 2012
Grant dateJan 20, 2015
Priority date
Expiry dateJun 14, 2032

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D89/713

Abstract

A triggerable bidirectional semiconductor device has two terminals and at least one gate. The device comprises, within a layer of silicon on insulator, a central semiconductor zone incorporating the at least one gate and comprising a central region having a first conductivity type, two intermediate regions having a second conductivity type respectively arranged on either side of and in contact with the central region, two semiconductor end zones respectively arranged on either side of the central zone, each end zone comprising two end regions having opposite types of conductivity, in contact with the adjacent intermediate region, the two end regions of each end zone being mutually connected electrically in order to form the two terminals of the device.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.