Passivation of group III-nitride heterojunction devices
US8937336B2 · kind B2 · utility
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7References
5Claims
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Key dates
| Filing date | May 16, 2013 |
| Grant date | Jan 20, 2015 |
| Priority date | — |
| Expiry date | May 16, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Passivation of group III-nitride heterojunction devices is described herein. The passivation facilitates simultaneous realization of effective/high current collapse suppression and low leakage current without the use of a sophisticated multiple-field plate technique. The passivation can be achieved by growing a charge-polarized AlN thin film on the surface of a group III-nitride based heterojunction device by plasma-enhanced atomic layer deposition such that positive polarization charges are induced at the interface to compensate for a majority of negative charges at the interface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.