PD SOI device with a body contact structure

US8937354B2 · kind B2 · utility

Assignee

• SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY CHINESE ACADEMY OF SCIENCES · CN

Inventors

• Jing Chen · Shanghai, CN
• Qingqing Wu · Shanghai, CN
• Jiexin Luo · Shanghai, CN
• Xiaolu Huang · Shanghai, CN
• Xi Wang · Shanghai, CN

Key dates

• Filing date: Sep 8, 2010
• Grant date: Jan 20, 2015
• Expiry date: Sep 8, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/601
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The present invention discloses a PD SOI device with a body contact structure. The active region of the PD SOI device includes: a body region; a gate region, which is inverted-L shaped, formed on the body region; a N-type source region and a N-type drain region, formed respectively at the two opposite sides of the anterior part the body region; a body contact region, formed at one side of the posterior part of the body region, which is side-by-side with the N-type source region; and a first silicide layer, formed on the body contact region and the N-type source region, which is contact to both of the body contact region and the N-type source region. The body contact region of the device is formed on the border of the source region and the leading-out terminal of the gate electrode. It can suppress floating body effect of the PD SOI device meanwhile not increasing the chip area, thereby overcoming the shortcoming in the prior art that the chip area is enlarged when the traditional body contact structure is employed. Furthermore, the fabrication process provided herein is simple and compatible to the CMOS technology.