Sensor and method using the same
US8937711B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 17, 2011 |
| Grant date | Jan 20, 2015 |
| Priority date | — |
| Expiry date | Oct 19, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01S17/894
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A sensor, including a plurality of photo gate pairs on a semiconductor substrate, each of the photo gate pairs including a first photo gate and a second photo gate, a first shared floating diffusion region in the semiconductor substrate, and a plurality of first transmission transistors on the semiconductor substrate, wherein each of the plurality of first transmission transistors is adapted to transmit charges to the first shared floating diffusion region in response to a first transmission control signal, the charges being generated in the semiconductor substrate under the first photo gate of each of the plurality of photo gate pairs.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.