Compositions for etching and methods of forming a semiconductor device using the same
US8940182B2 · kind B2 · utility
9Cited by
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16Claims
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Key dates
| Filing date | Aug 31, 2012 |
| Grant date | Jan 27, 2015 |
| Priority date | — |
| Expiry date | Mar 6, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/693
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
Etching compositions are provided. The etching composition includes a phosphoric acid, ammonium ions and a silicon compound. The silicon compound includes a silicon atom, an atomic group having an amino group combined with the silicon atom, and at least two oxygen atoms combined with the silicon atom. Methods utilizing the etching compositions are also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.