Method for fabricating semiconductor device
US8940600B2 · kind B2 · utility
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2References
8Claims
0Family size
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Key dates
| Filing date | Jun 3, 2014 |
| Grant date | Jan 27, 2015 |
| Priority date | — |
| Expiry date | Jun 3, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/811
Abstract
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a transistor region and a resistor region; forming a shallow trench isolation (STI) on the resistor region of the substrate; forming a tank in the STI; and forming a resistor in the tank and on two sides of the top surface of the STI outside the tank.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.