SiC substrate with SiC epitaxial film
US8940614B2 · kind B2 · utility
10Cited by
46References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 14, 2014 |
| Grant date | Jan 27, 2015 |
| Priority date | — |
| Expiry date | Mar 14, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/14
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming an epitaxial SiC film on SiC substrates in a warm wall CVD system, wherein the susceptor is actively heated and the ceiling and sidewall are not actively heated, but are allowed to be indirectly heated by the susceptor. The method includes a first process of reaction cell preparation and a second process of epitaxial film growth. The epitaxial growth is performed by flowing parallel to the surface of the wafers a gas mixture of hydrogen, silicon and carbon gases, at total gas velocity in a range 120 to 250 cm/sec.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.