Process for producing silicon and oxide films from organoaminosilane precursors
US8940648B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 12, 2013 |
| Grant date | Jan 27, 2015 |
| Priority date | — |
| Expiry date | Aug 12, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for depositing a silicon containing film on a substrate using an organoaminosilane is described herein. The organoaminosilanes are represented by the formulas:wherein R is selected from a C1-C10 linear, branched, or cyclic, saturated or unsaturated alkyl group with or without substituents; a C5-C10 aromatic group with or without substituents, a C3-C10 heterocyclic group with or without substituents, or a silyl group in formula C with or without substituents, R1 is selected from a C3-C10 linear, branched, cyclic, saturated or unsaturated alkyl group with or without substituents; a C6-C10 aromatic group with or without substituents, a C3-C10 heterocyclic group with or without substituents, a hydrogen atom, a silyl group with substituents and wherein R and R1 in formula A can be combined into a cyclic group and R2 representing a single bond, (CH2), chain, a ring, C3-C10 branched alkyl, SiR2, or SiH2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.