FinFETs with different fin heights
US8941153B2 · kind B2 · utility
40Cited by
11References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 30, 2010 |
| Grant date | Jan 27, 2015 |
| Priority date | — |
| Expiry date | Jan 29, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/834
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit structure includes a semiconductor substrate including a first portion in a first device region, and a second portion in a second device region. A first semiconductor fin is over the semiconductor substrate and has a first fin height. A second semiconductor fin is over the semiconductor substrate and has a second fin height. The first fin height is greater than the second fin height.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.