Precessional reversal in orthogonal spin transfer magnetic RAM devices
US8941196B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 3, 2013 |
| Grant date | Jan 27, 2015 |
| Priority date | — |
| Expiry date | Jul 3, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/16
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Orthogonal spin-torque bit cells whose spin torques from a perpendicular polarizer and an in-plane magnetized reference layer are constructively or destructively combined. An orthogonal spin-torque bit cell includes a perpendicular magnetized polarizing layer configured to provide a first spin-torque; an in-plane magnetized free layer and a reference layer configured to provide a second spin-torque. The first spin-torque and the second spin-torque combine and the combined first spin-torque and second spin-torque influences the magnetic state of the in-plane magnetized free layer. The in-plane magnetized free layer and the reference layer form a magnetic tunnel junction. The first spin-torque and second spin-torque can combine constructively to lower a switching current, increase a switching speed, and/or torque decrease an operating energy of the orthogonal spin-torque bit cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.