Semiconductor device having a necked semiconductor body and method of forming semiconductor bodies of varying width
US8941214B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 22, 2011 |
| Grant date | Jan 27, 2015 |
| Priority date | — |
| Expiry date | Dec 22, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/13067
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor devices having necked semiconductor bodies and methods of forming semiconductor bodies of varying width are described. For example, a semiconductor device includes a semiconductor body disposed above a substrate. A gate electrode stack is disposed over a portion of the semiconductor body to define a channel region in the semiconductor body under the gate electrode stack. Source and drain regions are defined in the semiconductor body on either side of the gate electrode stack. Sidewall spacers are disposed adjacent to the gate electrode stack and over only a portion of the source and drain regions. The portion of the source and drain regions under the sidewall spacers has a height and a width greater than a height and a width of the channel region of the semiconductor body.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.