Smart subfield method for E-beam lithography
US8945803B2 · kind B2 · utility
21Cited by
5References
20Claims
0Family size
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Key dates
| Filing date | Dec 16, 2013 |
| Grant date | Feb 3, 2015 |
| Priority date | — |
| Expiry date | Dec 16, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/143
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present disclosure provides a method of improving a layer to layer overlay error by an electron beam lithography system. The method includes generating a smart boundary of two subfields at the first pattern layer and obeying the smart boundary at all consecutive pattern layers. The same subfield is exposed by the same electron beam writer at all pattern layers. The overlay error caused by the different electron beam at different layer is improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.