Photosensitive imaging device and method for forming semiconductor device
US8945967B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 15, 2013 |
| Grant date | Feb 3, 2015 |
| Priority date | — |
| Expiry date | Mar 15, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/807
Abstract
A photosensitive imaging device and a method for forming a semiconductor device are provided. The method includes: providing a first device layer formed on a first substrate, wherein a conductive top bonding pad layer is formed on the first device layer; providing a continuous second device layer formed on a second substrate, wherein a continuous conductive adhesion layer is formed on the continuous second device layer; bonding the first device layer with the second device layer, where the top bonding pad layer on the first device layer is directly connected with the conductive continuous adhesion layer on the continuous second device layer; removing the second substrate; selectively etching the continuous second device and the continuous conductive adhesion layer to form a groove array; and filling up the groove array with an insulation material to form a plurality of second devices. Alignment accuracy may be improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.