Polysilicon resistor formation
US8946039B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 15, 2013 |
| Grant date | Feb 3, 2015 |
| Priority date | — |
| Expiry date | Feb 15, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/47
Abstract
Aspects of the present invention relate to an approach for implanting and forming a polysilicon resistor with a single implant dose. Specifically, a mask having a set of openings is formed over a resistor surface. The set of openings are typically formed in a column-row arrangement according to a predetermined pattern. Forming the mask in this manner allows the resistor surface to have multiple regions/zones. A first region is defined by the set of openings in the mask, and a second region is defined by the remaining portions of the mask. The resistor is then subjected to a single implant dose via the openings. Implanting the resistor in this manner allows the resistor to have multiple resistance values (i.e., a first resistance value in the first region, and a second resistance value in the second region).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.