Patent · US Active

Method and installation for producing a semiconductor device, and semiconductor device

US8946059B2 · kind B2 · utility

0Cited by

1References

19Claims

0Family size

Assignee

Applied Materials, Inc. · US

Inventors

Evelyn Scheer · Riedstadt, DE
Fabio Pieralisi · Aschaffenburg, DE
Marcus Bender · Hanau, DE

Key dates

Filing date	Oct 21, 2009
Grant date	Feb 3, 2015
Priority date	—
Expiry date	Oct 18, 2032

Classification

Technology area (CPC H)Electricity
CPC primaryH10D30/6743
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method of producing a semiconductor device is provided, the semiconductor device including a substrate, a semiconductor layer and at least one metallization layer adjacent to at least one element chosen from the substrate and the semiconductor layer, the method including forming at least one metallization layer which, adjacent to at least one element chosen from the substrate and the semiconductor layer, includes oxygen.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.