Method of forming seed layer and method of forming silicon-containing thin film
US8946065B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 26, 2012 |
| Grant date | Feb 3, 2015 |
| Priority date | — |
| Expiry date | Jan 11, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Provided is a method of forming a seed layer for forming a thin film, which is capable of further improving a thickness uniformity of the thin film. The method of forming a seed layer that is a seed of the thin film on a base includes adsorbing at least silicon included in an aminosilane-based gas on the base, by using the aminosilane-based gas; and depositing at least silicon included in a higher-order silane-based gas having an order that is equal to or higher than disilane on the base, on which at least the silicon included in the aminosilane-based gas is adsorbed, by using the higher-order silane-based gas having an order that is equal to or higher than the disilane.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.