Patent · US Active

Method for etching a layer on a silicon semiconductor substrate

US8946090B2 · kind B2 · utility

0Cited by

1References

22Claims

0Family size

Assignee

Robert Bosch GmbH · DE

Inventors

Volker Becker · Marxzell, DE
Franz Laermer · Stuttgart, DE
Tino Fuchs · Rötteln, DE
Christina Leinenbach · Ensdorf, DE

Key dates

Filing date	Jul 2, 2008
Grant date	Feb 3, 2015
Priority date	—
Expiry date	Jan 15, 2030

Classification

Technology area (CPC B)Performing Operations; Transporting
CPC primaryB81C2201/0138
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for selective etching of an SiGe mixed semiconductor layer on a silicon semiconductor substrate by dry chemical etching of the SiGe mixed semiconductor layer with the aid of an etching gas selected from the group including ClF3 and/or ClF5, a gas selected from the group including Cl2 and/or HCl being added to the etching gas.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.