Method of forming interlayer dielectric film above metal gate of semiconductor device
US8946095B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 25, 2012 |
| Grant date | Feb 3, 2015 |
| Priority date | — |
| Expiry date | Apr 18, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76801
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming an interlayer dielectric film above a metal gate of a metal oxide semiconductor device comprises forming a metal gate above a semiconductor substrate; and forming the interlayer dielectric film above the metal gate by reacting a silicon-containing compound as precursor and a reactant for oxidizing the silicon-containing compound. The silicon-containing compound has the formula:Six(A)y(B)z(C)m(D)n (I)wherein x is in the range of from 1 to 9; y+z+m+n is in the range of from 4 to 20; and A, B, C, and D independently represent a functional group connecting with a silicon atom. The functional group is selected from a group consisting of alkyl, alkenyl, alkynyl, aryl, alkylaryl, alkoxyl, alkylcarbonyl, carboxyl, alkylcarbonyloxy, amide, amino, alkylcarbonylamino, —NO2, and —CN.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.