Photo-patternable dielectric materials curable to porous dielectric materials, formulations, precursors and methods of use thereof
US8946371B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 16, 2013 |
| Grant date | Feb 3, 2015 |
| Priority date | — |
| Expiry date | Jan 24, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31663
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Silsesquioxane polymers that cure to porous silsesquioxane polymers, silsesquioxane polymers that cure to porous silsesquioxane polymers in negative tone photo-patternable dielectric formulations, methods of forming structures using negative tone photo-patternable dielectric formulations containing silsesquioxane polymers that cure to porous silsesquioxane polymers, structures containing porous silsesquioxane polymers and monomers and method of preparing monomers for silsesquioxane polymers that cure to porous silsesquioxane polymers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.