Photodiode having a p-n junction with varying expansion of the space charge zone due to application of a variable voltage

US8946617B2 · kind B2 · utility

Assignee

• NAMLAB GGMBH · DE

Inventors

• Juergen Holz · Munich, DE
• Andre Wachowiak · Dresden, DE
• Stefan Slesazeck · Dresden, DE

Key dates

• Filing date: Nov 10, 2011
• Grant date: Feb 3, 2015
• Expiry date: Jun 21, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F30/221
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

A photodiode comprises a semiconductor material having a p-n junction, the p-n junction being located between a first doping region of a first doping type and a second doping region of a second doping type, the second doping region comprising a highly doped layer and a lightly doped layer. A photodiode further comprises a voltage source being capable to apply a variable voltage between the first doping region and the lightly doped layer of the second doping region in order to vary the expansion of a space charge zone of the p-n junction.