Resistance changing element capable of operating at low voltage, semiconductor device, and method for forming resistance change element
US8946672B2 · kind B2 · utility
1Cited by
6References
10Claims
0Family size
Assignee
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Key dates
| Filing date | Nov 8, 2010 |
| Grant date | Feb 3, 2015 |
| Priority date | — |
| Expiry date | Jun 11, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/881
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A resistance changing element according to the present invention comprises a first electrode (101) and a second electrode (103); and an ion conducting layer (102) that is formed between the first electrode (101) and the second electrode (103) and that contains at least oxygen and carbon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.