Zinc oxide based compound semiconductor device
US8946727B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 23, 2006 |
| Grant date | Feb 3, 2015 |
| Priority date | — |
| Expiry date | Jun 29, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/823
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is provided a zinc oxide based compound semiconductor device in which drive voltage is not raised, property of crystal is satisfactory and device characteristics is excellent, even when the semiconductor device is formed by forming a lamination portion having a hetero junction of the ZnO based compound semiconductor layers. The zinc oxide based compound semiconductor device includes a substrate (1) made of MgxZn1-xO (0≦x≦0.5), the principal plane of which is a plane A (11-20) or a plane M (10-10), and single crystal layers (2) to (6) made of zinc oxide based compound semiconductor, which are epitaxially grown on the principal plane of the substrate (1) in such orientation that a plane parallel to the principal plane is a plane {11-20} or a plane {10-10} and a plane perpendicular to the principal plane is a plane {0001}.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.