Semiconductor device with protective layer and method of manufacturing same
US8946800B2 · kind B2 · utility
7Cited by
6References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 23, 2012 |
| Grant date | Feb 3, 2015 |
| Priority date | — |
| Expiry date | Aug 23, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/315
Abstract
To provide a semiconductor device featuring reduced variation in capacitor characteristics. In the semiconductor device, a protective layer is provided at the periphery of the upper end portion of a recess (hole). This protective layer has a dielectric constant higher than that of an insulating layer placed in the same layer as the protective layer and configuring a multilayer wiring layer placed in a logic circuit region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.