Semiconductor device having elevated structure and method of manufacturing the same
US8946828B2 · kind B2 · utility
82Cited by
9References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 9, 2010 |
| Grant date | Feb 3, 2015 |
| Priority date | — |
| Expiry date | Feb 10, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/017
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a semiconductor substrate; a gate stack overlying the substrate, a spacer formed on sidewalls of the gate stack, and a protection layer overlying the gate stack for filling at least a portion of a space surrounded by the spacer and the top surface of the gate stack. A top surface of the spacer is higher than a top surface of the gate stack.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.