Backside illuminated image sensors and method of making the same
US8946847B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 4, 2014 |
| Grant date | Feb 3, 2015 |
| Priority date | — |
| Expiry date | Feb 4, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/811
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A backside illuminated image sensor includes a substrate with a substrate depth, where the substrate includes a pixel region and a peripheral region. The substrate further includes a front surface and a back surface. The backside illuminated image sensor includes a first isolation structure formed in the pixel region of the substrate, where a bottom of the first isolation structure is exposed at the back surface of the substrate. The backside illuminated image sensor includes a second isolation structure formed in the peripheral region of the substrate, where the second isolation structure has a depth less than a depth of the first isolation structure. The backside illuminated image sensor includes an implant region adjacent to at least a portion of sidewalls of each isolation structure in the pixel region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.