Estimating thickness based on number of peaks between two peaks in scanning white light interferometry
US8947673B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 16, 2009 |
| Grant date | Feb 3, 2015 |
| Priority date | — |
| Expiry date | Jul 5, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01B11/0675
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Disclosed is a method of measuring thickness or a surface profile of a thin film layer formed on a base layer through a white light scanning interferometry, the method including: preparing simulation interference signals corresponding to thicknesses by assuming a plurality of sample thin film layers different in thickness from one another and simulating interference signals with respect to the respective sample thin film layers; acquiring a real interference signal with respect to an optical-axis direction of entering the thin film layer by illuminating the thin film layer with white light; preparing a plurality of estimated thicknesses that the thin film layer may have on the basis of the real interference signal; comparing whether the simulation interference signal having thickness corresponding to the estimated thickness is substantially matched with the real interference signal; and determining the thickness of the simulation interference signal substantially matched with the real interference signal as the thickness of the thin film layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.