Film deposition apparatus
US8951347B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 13, 2009 |
| Grant date | Feb 10, 2015 |
| Priority date | — |
| Expiry date | Jun 14, 2032 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45591
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A film deposition apparatus is provided with a gas nozzle in which ejection holes that eject a reaction gas are formed along a longitudinal direction of the gas nozzle, and a flow regulation member that protrudes from the gas nozzle in either one of upstream and downstream directions of a rotation direction of a turntable. In such a configuration, a separation gas flowing from an upstream side of the rotation direction to the gas nozzle is restricted from flowing between the gas nozzle and the turntable on which a substrate is placed, and the reaction gas flowing upward from the turntable is restricted by the separation gas, thereby impeding a reaction gas concentration in a process area from being lowered.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.