Method for producing liquid-discharge-head substrate
US8951815B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 19, 2012 |
| Grant date | Feb 10, 2015 |
| Priority date | — |
| Expiry date | Sep 4, 2032 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB41J2/1639
- WIPO fieldTextile and paper machines
- WIPO sectorMechanical engineering
Abstract
A method for producing a liquid-discharge-head substrate includes a step of preparing a silicon substrate including, at a front-surface side of the silicon substrate, an energy generating element; a step of forming a first etchant introduction hole on the front-surface side of the silicon substrate; a step of supplying a first etchant into the first etchant introduction hole formed on the front-surface side of the silicon substrate, and supplying a second etchant to a back-surface side of the silicon substrate; a step of stopping the supply of the second etchant; and a step of, after the supply of the second etchant has been stopped, forming a liquid supply port extending through front and back surfaces of the silicon substrate by the supply of the first etchant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.