FinFET formed over dielectric
US8951850B1 · kind B1 · utility
9Cited by
10References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 21, 2013 |
| Grant date | Feb 10, 2015 |
| Priority date | — |
| Expiry date | Aug 21, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/83
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method for semiconductor fabrication includes patterning one or more mandrels over a semiconductor substrate, the one or more mandrels having dielectric material formed therebetween. A semiconductor layer is formed over exposed portions of the one or more mandrels. A thermal oxidation is performed to diffuse elements from the semiconductor layer into an upper portion of the one or more mandrels and concurrently oxidize a lower portion of the one or more mandrels to form the one or more mandrels on the dielectric material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.