Inventor · Schenectady, NY, US

Hong He

157Patents
9h-index
84Co-inventors
83Inventor score

Filing activity: Jun 6, 1995 → May 13, 2024

Most-cited inventions

PatentTitleAreaCited byStatus
US9287135B1 Sidewall image transfer process for fin patterning Electricity 44 Active
US5741468A Exhaust gas cleaner and method for cleaning exhaust gas Performing Operations; Transporting 24 Expired
US9276013B1 Integrated formation of Si and SiGe fins Electricity 16 Active
US9515185B2 Silicon germanium-on-insulator FinFET Electricity 13 Active
US9093326B2 Electrically isolated SiGe fin formation by local oxidation Electricity 12 Active
US9379221B1 Bottom-up metal gate formation on replacement metal gate finFET devices Electricity 12 Active
US9087687B2 Thin heterostructure channel device Electricity 11 Active
US9324830B2 Self-aligned contact process enabled by low temperature Electricity 10 Active
US8951850B1 FinFET formed over dielectric Electricity 9 Active
US9368350B1 Tone inverted directed self-assembly (DSA) fin patterning Electricity 9 Active
US9041094B2 Finfet formed over dielectric Electricity 9 Active
US9716038B2 Critical dimension shrink through selective metal growth on metal hardmask sidewalls Emerging Cross-Sectional Technologies 8 Active
US9099401B2 Sidewall image transfer with a spin-on hardmask Electricity 8 Active
US9595473B2 Critical dimension shrink through selective metal growth on metal hardmask sidewalls Emerging Cross-Sectional Technologies 7 Active
US9431425B1 Directly forming SiGe fins on oxide Electricity 7 Active
US9252243B2 Gate structure integration scheme for fin field effect transistors Electricity 7 Active
US9331148B1 FinFET device with channel strain Electricity 6 Active
US9768272B2 Replacement gate FinFET process using a sit process to define source/drain regions, gate spacers and a gate cavity Electricity 6 Active
US9418900B1 Silicon germanium and silicon fins on oxide from bulk wafer Electricity 5 Active
US8759200B2 Methods and apparatus for selective epitaxy of Si-containing materials and substitutionally doped crystalline Si-containing material Electricity 5 Active
US9515089B1 Bulk fin formation with vertical fin sidewall profile Electricity 5 Active
US9054218B2 Method of manufacturing a FinFET device using a sacrificial epitaxy region for improved fin merge and FinFET device formed by same Electricity 4 Active
US9761699B2 Integration of strained silicon germanium PFET device and silicon NFET device for finFET structures Electricity 4 Active
US9222315B2 Rotary lock block type drilling riser connector Mechanical Engineering; Lighting; Heating 4 Active
US9461174B2 Method for the formation of silicon and silicon-germanium fin structures for FinFET devices Electricity 4 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.