Manufacturing method for semiconductor device having metal gate
US8951855B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 24, 2012 |
| Grant date | Feb 10, 2015 |
| Priority date | — |
| Expiry date | Mar 28, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0177
Abstract
A manufacturing method for a semiconductor device having a metal gate is provided. First and second gate trenches are respectively formed in first and second semiconductor devices. A work-function metal layer is formed in the first and second gate trenches. A shielding layer is formed on the substrate. A first removing step is performed, so that the remaining shielding layer is at bottom of the second gate trench and fills up the first gate trench. A second removing step is performed, so that the remaining shielding layer is at bottom of the first gate trench to expose the work-function metal layer at sidewall of the first gate trench and in the second gate trench. The work-function metal layer not covered by the remaining shielding layer is removed, so that the remaining work-function metal layer is only at bottom of the first gate trench. The remaining shielding layer is removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.