Contact elements of a semiconductor device formed by electroless plating and excess material removal with reduced sheer forces

US8951900B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Axel Preusse · Radebeul, DE
• Norbert Schroeder · Dresden, DE
• Uwe Stoeckgen · Dresden, DE

Key dates

• Filing date: Apr 25, 2013
• Grant date: Feb 10, 2015
• Expiry date: Aug 28, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76879
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The present disclosure is directed to, among other things, an illustrative method that includes forming an opening in a dielectric material of a contact level of a semiconductor device, and selectively depositing a conductive material in the opening to form a contact element therein, the contact element extending to a contact area of a circuit element and having a laterally restricted excess portion formed outside of the opening and above the dielectric material. The disclosed method further includes forming a sacrificial material layer above the dielectric material and the contact element, the sacrificial material layer surrounding the laterally restricted excess portion. Additionally, the method includes planarizing a surface topography of the contact level in the presence of the sacrificial material so as to remove the laterally restricted excess portion from above the dielectric material.