3D image profiling techniques for lithography
US8952329B1 · kind B1 · utility
2Cited by
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19Claims
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Key dates
| Filing date | Oct 3, 2013 |
| Grant date | Feb 10, 2015 |
| Priority date | — |
| Expiry date | Oct 3, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01B2210/56
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for characterizing a three-dimensional surface profile of a semiconductor workpiece is provided. In this method, the three-dimensional surface profile is imaged from a normal angle to measure widths of various surfaces in a first image. The three-dimensional surface is also imaged from a first oblique angle to re-measure the widths of the various surfaces in a second image. Based on differences in widths of corresponding surfaces for first and second images, a feature height and sidewall angle are determined for the three-dimensional profile.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.