Patent · US Active

Techniques for processing photoresist features using ions

US8952344B2 · kind B2 · utility

0Cited by

1References

20Claims

0Family size

Assignee

Varian Semiconductor Equipment Associates, Inc. · US

Inventors

Frank Sinclair · Quincy, US
Ludovic Godet · Sunnyvale, US
Patrick M. Martin · Ipswich, US
Armah Kpissay · Beverly Farms, US

Key dates

Filing date	Mar 14, 2013
Grant date	Feb 10, 2015
Priority date	—
Expiry date	Mar 14, 2033

Classification

Technology area (CPC G)Physics
CPC primaryG03F7/40
WIPO fieldOptics
WIPO sectorInstruments

Abstract

A method of treating a substrate includes directing first ions over a first range of angles to one or more photoresist features disposed on the substrate, the first ions effective to generate an altered layer in the one or more photoresist features, the altered surface layer encapsulating an inner portion of the one or more photoresist features, and directing second ions different from the first ions over a second range of angles to the one or more photoresist features, the second ions effective to generate gaseous species in the inner regions of the one or more photoresist features.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.