Semiconductor light emitting device, wafer, and method for manufacturing nitride semiconductor crystal layer

US8952401B2 · kind B2 · utility

Assignee

• Kabushiki Kaisha Toshiba · JP

Inventors

• Naoharu Sugiyama · Yokohama, JP
• Taisuke Sato · Yokohama, JP
• Hiroshi Ono · Setagaya, JP
• Satoshi Mitsugi · Kawasaki, JP
• Tomonari Shioda · Yokohama, JP
• Jongil Hwang · Yokohama, JP
• Hung Hung · Yokohama, JP
• Shinya Nunoue · Ichikawa, JP

Key dates

• Filing date: Aug 29, 2011
• Grant date: Feb 10, 2015
• Expiry date: Aug 29, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/835
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a light emitting layer, a second semiconductor layer, and a low refractive index layer. The first semiconductor layer has a first major surface and a second major surface being opposite to the first major surface. The light emitting layer has an active layer provided on the second major surface. The second semiconductor layer is provided on the light emitting layer. The low refractive index layer covers partially the first major surface and has a refractive index lower than the refractive index of the first semiconductor layer.