Semiconductor storage device and manufacturing method thereof
US8952444B2 · kind B2 · utility
1Cited by
0References
10Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 16, 2012 |
| Grant date | Feb 10, 2015 |
| Priority date | — |
| Expiry date | Jun 21, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B41/35
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor storage device according to an embodiment comprises active areas on a semiconductor substrate. An element isolation is arranged between the active areas and filled by an insulating film. A plurality of memory cells configured to store data are formed on the active areas. Air gaps are arranged between upper-end edge parts of the active areas where the memory cells are formed and an insulating film in the element isolation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.