Semiconductor device having both IGBT area and diode area
US8952449B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 16, 2011 |
| Grant date | Feb 10, 2015 |
| Priority date | — |
| Expiry date | May 2, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/26513
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is known a semiconductor device in which an IGBT structure is provided in an IGBT area and a diode structure is provided in a diode area, the IGBT area and the diode area are both located within a same substrate, and the IGBT area is adjacent to the diode area. In this type of semiconductor device, a phenomenon that carriers accumulated within the IGBT area flow into the diode area when the IGBT structure is turned off. In order to prevent this phenomenon, a region of shortening lifetime of carriers is provided at least in a sub-area that is within said IGBT area and adjacent to said diode area. In the sub-area, emitter of IGBT structure is omitted.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.