Semiconductor devices and method of manufacturing the same
US8952452B2 · kind B2 · utility
13Cited by
7References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 3, 2012 |
| Grant date | Feb 10, 2015 |
| Priority date | — |
| Expiry date | Dec 5, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/83
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor devices, and a method of manufacturing the same, include a gate insulating film pattern over a semiconductor substrate. A gate electrode is formed over the gate insulating film pattern. A spacer structure is formed on at least one side of the gate electrode and the gate insulating film pattern. The spacer structure includes a first insulating film spacer contacting the gate insulating film pattern, and a second insulating film spacer on an outer side of the first insulating film spacer. The semiconductor device has an air gap between the first insulating film spacer and the second insulating film spacer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.