Patent · US Active

Semiconductor device and method for manufacturing the same

US8952538B2 · kind B2 · utility

15Cited by
3References
9Claims
0Family size

Assignee

Inventor

Key dates

Filing dateDec 22, 2010
Grant dateFeb 10, 2015
Priority date
Expiry dateJul 25, 2031

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/2064
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A semiconductor device includes: an integrated circuit having an electrode pad; a first insulating layer disposed on the integrated circuit; a redistribution layer including a plurality of wirings and disposed on the first insulating layer, at least one of the plurality of wirings being electrically coupled to the electrode pad; a second insulating layer having a opening on at least a portion of the plurality of wirings; a metal film disposed on the opening and on the second insulating layer, and electrically coupled to at least one of the plurality of wirings; and a solder bump the solder bump overhanging at least one of the plurality of wirings not electrically coupled to the metal film.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.