Method of fabricating metal-insulator-semiconductor tunneling contacts using conformal deposition and thermal growth processes

US8952541B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Niloy Mukherjee · Beaverton, US
• Gilbert Dewey · Beaverton, US
• Matthew V. Metz · Portland, US
• Jack T. Kavalieros · Portland, US
• Robert S. Chau · Beaverton, US

Key dates

• Filing date: Jan 17, 2012
• Grant date: Feb 10, 2015
• Expiry date: Mar 19, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/693
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A contact may be fabricated by a method including depositing a dielectric layer on a substrate having a transistor, etching a first opening in the dielectric layer that extends to a source region, forming an insulator on the source region, forming a contact metal on the insulator, the insulator separating the contact metal from the source region, and filling substantially all of the first opening, wherein the contact metal remains separated from the source region after the first opening is filled.