Patent · US Active

Detection of contaminating substances in an EUV lithography apparatus

US8953145B2 · kind B2 · utility

4Cited by

2References

29Claims

0Family size

Assignee

Carl Zeiss SMT GmbH · DE

Inventors

Dieter Kraus · Munich, DE
Dirk Heinrich Ehm · Beckingen, DE
Stefan Schmidt · Aalen, DE

Key dates

Filing date	Feb 25, 2011
Grant date	Feb 10, 2015
Priority date	—
Expiry date	Jun 19, 2032

Classification

Technology area (CPC G)Physics
CPC primaryG03F7/70983
WIPO fieldOptics
WIPO sectorInstruments

Abstract

An EUV (extreme ultraviolet) lithography apparatus (1) including: a housing (1a) enclosing an interior (15), at least one reflective optical element (5, 6, 8, 9, 10, 14.1 to 14.6) arranged in the interior (15), a vacuum generating unit (1b) generating a residual gas atmosphere in the interior (15), and a residual gas analyzer (18a, 18b) detecting at least one contaminating substance (17a) in the residual gas atmosphere. The residual gas analyzer (18a) has a storage device (21) having an ion trap for storing the contaminating substance (17a). Additionally, a method for detecting at least one contaminating substance by residual gas analysis of a residual gas atmosphere of an EUV lithography apparatus (1) having a housing (1a) having an interior (15), in which at least one reflective optical element (5, 6, 8, 9, 10, 14.1 to 14.6), is arranged, wherein the contaminating substance (17a) is stored in a storage device (21) in order to carry out the residual gas analysis.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.