Semiconductor device, and manufacturing method and manufacturing apparatus of the same
US8956917B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 19, 2012 |
| Grant date | Feb 17, 2015 |
| Priority date | — |
| Expiry date | Jan 19, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/6836
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, a manufacturing method of a semiconductor device is disclosed. The method includes: (a) forming cutting grooves in an element formation surface of a semiconductor wafer on which semiconductor elements are formed; (b) applying a protection tape on the element formation surface of the semiconductor wafer; (c) grinding a rear surface of the semiconductor wafer to thin the semiconductor wafer and to divide the semiconductor wafer into a plurality of semiconductor chips on which the semiconductor elements are formed; (d) forming an adhesive layer on the rear surface of the semiconductor wafer; (e) separating and cutting the adhesive layer for each of the semiconductor chips; and (f) removing the protection tape. The (e) is performed by spraying a high-pressure air to the adhesive layer formed on the rear surface of the semiconductor wafer while melting or softening the adhesive layer by heating.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.