Patent · US Active

Selective formation of metallic films on metallic surfaces

US8956971B2 · kind B2 · utility

543Cited by

7References

28Claims

0Family size

Assignee

ASM International N.V. · NL

Inventors

Suvi Haukka · Helsinki, FI
Antti Niskanen · Helsinki, FI
Marko Tuominen · Helsinki, FI

Key dates

Filing date	Jun 10, 2011
Grant date	Feb 17, 2015
Priority date	—
Expiry date	Nov 2, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/76883
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Metallic layers can be selectively deposited on surfaces of a substrate relative to a second surface of the substrate. In preferred embodiments, the metallic layers are selectively deposited on copper instead of insulating or dielectric materials. In preferred embodiments, a first precursor forms a layer or adsorbed species on the first surface and is subsequently reacted or converted to form a metallic layer. Preferably the deposition temperature is selected such that a selectivity of above about 90% is achieved.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.