Graphene field effect transistor
US8957405B2 · kind B2 · utility
20Cited by
9References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 11, 2013 |
| Grant date | Feb 17, 2015 |
| Priority date | — |
| Expiry date | Nov 11, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Manufacturing a semiconductor structure including: forming a seed material on a sidewall of a mandrel; forming a graphene field effect transistor (FET) on the seed material; and removing the seed material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.