Method for manufacturing nano-imprint mould, method for manufacturing light-emitting diode using the nano imprint mould manufactured thereby, and light-emitting diode manufactured thereby
US8957449B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 28, 2011 |
| Grant date | Feb 17, 2015 |
| Priority date | — |
| Expiry date | Oct 28, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/882
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method of manufacturing a light emitting diode, includes a process of forming an n-type nitride semiconductor layer, a light emitting layer, and a p-type nitride semiconductor layer on a temporary substrate, a process of forming a p-type electrode on the p-type nitride semiconductor layer, a process of forming a conductive substrate on the p-type electrode, a process of removing the temporary substrate to expose the n-type nitride semiconductor layer, a process of forming a nanoimprint resist layer on the n-type nitride semiconductor layer, a process of pressing the nanoimprint mold on the nanoimprint resist layer to transfer the nano-pattern onto the nanoimprint resist layer, and a process of separating the nanoimprint mold from the nanoimprint resist layer having the nano-pattern and etching a portion of the nanoimprint resist layer having the nano-pattern to form an n-type electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.