Patent · US Active

Static NAND cell for ternary content addressable memory (TCAM)

US8958226B2 · kind B2 · utility

2Cited by

17References

11Claims

0Family size

Assignee

QUALCOMM Incorporated · US

Inventors

Esin Terzioglu · San Diego, US
Nishith Desai · Austin, US
Rakesh Vattikonda · San Diego, US
Changho Jung · Hwaseong-si, KR
Sei Seung Yoon · San Diego, US

Key dates

Filing date	Dec 28, 2012
Grant date	Feb 17, 2015
Priority date	—
Expiry date	Feb 18, 2033

Classification

Technology area (CPC G)Physics
CPC primaryG11C15/046
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A static, ternary content addressable memory (TCAM) includes a key cell and a mask cell coupled to intermediate match lines. The key cell is coupled to a first pull-down transistor and a first pull-up transistor. The mask cell is coupled to a second pull-down transistor and a second pull-up transistor. The first pull-down transistor and second pull-down transistor are connected in parallel and the first pull-up transistor and second pull-up transistor are connected in series. A match line output is also coupled to the first pull-down transistor and second pull-down transistor and further coupled to the first pull-up transistor and second pull-up transistor.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.