Electronic device and method for fabricating the same
US8959250B2 · kind B2 · utility
8Cited by
0References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 28, 2014 |
| Grant date | Feb 17, 2015 |
| Priority date | — |
| Expiry date | Mar 28, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B53/30
Abstract
An electronic device including a semiconductor memory is provided. The semiconductor memory includes an interlayer dielectric layer disposed over a substrate, and having a recess which exposes a portion of the substrate; a bottom contact partially filling the recess; and a resistance variable element including a bottom layer which fills at least a remaining space of the recess over the bottom contact, and a remaining layer which is disposed over the bottom layer and protrudes out of the interlayer dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.